The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2006
Filed:
Jun. 13, 2005
Ko-hsing Chang, Hsinchu, TW;
Tung-po Chen, Taichung, TW;
Tung-ming Lai, Hsinchu, TW;
Chen-chiu Hsue, Hsinchu, TW;
Ko-Hsing Chang, Hsinchu, TW;
Tung-Po Chen, Taichung, TW;
Tung-Ming Lai, Hsinchu, TW;
Chen-Chiu Hsue, Hsinchu, TW;
Powerchip Semiconductor Corp., Hsinchu, TW;
Abstract
A method for manufacturing an OTEPROM is described. A tunneling oxide layer, a first conductive layer, a first patterned mask layer are formed on a substrate. A trench is formed in the substrate. An insulating layer is formed to fill the trench. A portion of the first conductive layer destined to form the floating gate is exposed and then a cap layer is formed thereon. The first patterned mask layer is removed and then a second conductive layer and a second patterned mask layer are formed over the substrate. A word line and a floating gate are formed using the second patterned mask layer and the cap layer as a mask. The second patterned mask layer is removed and then source/drain regions are formed in the substrate on both sides of the word line and the floating gate and between the word line and the floating gate.