The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2006
Filed:
Nov. 14, 2003
James N. Pan, Fishkill, NY (US);
John G. Pellerin, Hopewell Junction, NY (US);
Jon Cheek, Wallkill, NY (US);
James N. Pan, Fishkill, NY (US);
John G. Pellerin, Hopewell Junction, NY (US);
Jon Cheek, Wallkill, NY (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A multiple-channel semiconductor device has fully or partially depleted quantum wells and is especially useful in ultra large scale integration devices, such as CMOSFETs. Multiple channel regions are provided on a substrate with a gate electrode formed on the uppermost channel region, separated by a gate oxide, for example. The vertical stacking of multiple channels and the gate electrode permit increased drive current in a semiconductor device without increasing the silicon area occupied by the device.