The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2006
Filed:
Sep. 23, 2003
Applicants:
Bing LU, Gilbert, AZ (US);
James R. Wasson, Tempe, AZ (US);
Inventors:
Bing Lu, Gilbert, AZ (US);
James R. Wasson, Tempe, AZ (US);
Assignee:
Freescale Semiconductor, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01F 9/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A bilayer hardmaskis used to manufacture a mask, which is can be implemented to pattern a resiston a semiconductor wafer. In one embodiment, the bilayer hardmaskhas two layers: a first hardmask layerand a second hardmask layer. The first hardmask layermay be carbon and can be etched selective to the overlying second hardmask layerand an underlying absorber structure. In one embodiment, the second hardmask layeris a transparent layer of SiON, SiN, or SiO. The bilayer hardmaskallows for a thinner resist to be used during fabrication of the mask