The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2006
Filed:
May. 12, 2003
Applicants:
Albert Birner, Dresden, DE;
Dirk Schumann, Dresden, DE;
Matthias Goldbach, Dresden, DE;
Inventors:
Assignee:
Infineon Technologies AG, Munich, DE;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H05K 3/07 (2006.01);
U.S. Cl.
CPC ...
Abstract
An electrochemical method is provided for producing trenches for trench capacitors in p-doped silicon with a very high diameter/depth aspect ratio for large scale integrated semiconductor memories. Trenches (macropores) having a diameter of less than about 100 nm and a depth of more than 10 μm can be produced on p-doped silicon having a very low resistivity at a high etching rate.