The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2006
Filed:
Jan. 08, 2003
Luigi Colombo, Dallas, TX (US);
Mark Visokay, Richardson, TX (US);
James Joseph Chambers, Dallas, TX (US);
Antonio Luis Pacheco Rotondaro, Dallas, TX (US);
Luigi Colombo, Dallas, TX (US);
Mark Visokay, Richardson, TX (US);
James Joseph Chambers, Dallas, TX (US);
Antonio Luis Pacheco Rotondaro, Dallas, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
Methods and systems are disclosed that facilitate formation of dielectric layers having a particular composition profile by forming the dielectric layer as a number of sub-layers. The sub-layers are thin enough so that specific relative compositions can be achieved for each layer and, therefore, the sub-layers collectively yield a dielectric layer with a particular profile. The formation of individual sub layers is accomplished by controlling one or more processing parameters for a chemical vapor deposition process that affect relative compositions. Some processing parameters that can be employed include wafer temperature, pressure, and precursor flow rate.