The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 04, 2006

Filed:

Sep. 12, 2002
Applicants:

Chia-hong Jan, Portland, OR (US);

Tracey Scherban, Portland, OR (US);

Ying Zhou, Portland, OR (US);

Adam Schafer, Portland, OR (US);

Brett Robert Schroeder, Portland, OR (US);

Inventors:

Chia-Hong Jan, Portland, OR (US);

Tracey Scherban, Portland, OR (US);

Ying Zhou, Portland, OR (US);

Adam Schafer, Portland, OR (US);

Brett Robert Schroeder, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/26 (2006.01); H01L 21/324 (2006.01); H01L 21/31 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
Abstract

Adhesion between silicon nitride etch-stop layers and carbon doped oxide films may be improved by using plasma argon densification treatments of the carbon doped oxide films. The resulting surface layer of the carbon doped oxide films may be carbon-depleted and may include a relatively rough interface to improve the adhesion of deposited silicon nitride films.


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