The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2006
Filed:
Feb. 04, 2004
Chunchieh Huang, Fremont, CA (US);
Chia-shun Hsiao, Cupertino, CA (US);
Jin-ho Kim, San Jose, CA (US);
Kuei-chang Tsai, Cupertino, CA (US);
Barbara Haselden, Cupertino, CA (US);
Daniel C. Wang, San Jose, CA (US);
Chunchieh Huang, Fremont, CA (US);
Chia-Shun Hsiao, Cupertino, CA (US);
Jin-Ho Kim, San Jose, CA (US);
Kuei-Chang Tsai, Cupertino, CA (US);
Barbara Haselden, Cupertino, CA (US);
Daniel C. Wang, San Jose, CA (US);
ProMOS Technologies Inc., Hsin Chu, TW;
Abstract
In integrated circuit fabrication, an etch is used that has a lateral component. For example, the etch may be isotropic. Before the isotropic etch of a layer (), another etch of the same layer is performed. This other etch can be anisotropic. This etch attacks a portion (X) of the layer adjacent to the feature to be formed by the isotropic etch. That portion is entirely or partially removed by the anisotropic etch. Then the isotropic etch mask () is formed to extend beyond the feature over the location of the portion subjected to the anisotropic etch. If that portion was removed entirely, then the isotropic etch mask may completely seal off the feature to be formed on the side of that portion, so the lateral etching will not occur. If that portion was removed only partially, then the lateral undercut will be impeded because the passage to the feature under the isotropic etch mask will be narrowed.