The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2006
Filed:
Aug. 21, 2002
Satoshi Tobe, Gunma, JP;
Satoshi Tobe, Gunma, JP;
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Abstract
The present invention provides an epitaxial wafer wherein a silicon epitaxial layer is formed on a surface of a silicon single crystal wafer in which nitrogen is doped, and a density of oxide precipitates having such a size that a gettering capability can be achieved in a bulk is 10numbers/cmor more. And the present invention also provides a method for producing an epitaxial wafer wherein a silicon single crystal in which nitrogen is doped is pulled by Czochralski method, the silicon single crystal is processed into a wafer to produce a silicon single crystal wafer, and the silicon single crystal wafer is subjected to heat treatment so that a density of oxide precipitates having such a size that a gettering capability can be achieved in a bulk of the wafer may be 10numbers/cmor more, and then the silicon single crystal wafer is subjected to epitaxial growth. A silicon single crystal wafer which surely has a high gettering capability irrespective of a device process can be obtained herewith.