The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2006
Filed:
May. 25, 2004
Toshihide Nabatame, Hitachi, JP;
Takaaki Suzuki, Hitachinaka, JP;
Tetsuo Fujiwara, Hitachinaka, JP;
Kazutoshi Higashiyama, Naka-machi, JP;
Toshihide Nabatame, Hitachi, JP;
Takaaki Suzuki, Hitachinaka, JP;
Tetsuo Fujiwara, Hitachinaka, JP;
Kazutoshi Higashiyama, Naka-machi, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A semiconductor device containing a dielectric capacitor having an excellent step coverage for a device structure of high aspect ratio corresponding to high integration degree, as well as a manufacturing method therefor are provided. A dielectric capacitor of high integration degree is manufactured by forming a bottom electrodeand a top-electrodecomprising a homogeneous thin Ru film with 100% step coverage while putting a dielectrictherebetween on substrateshaving a three-dimensional structure with an aspect ratio of 3 or more by a MOCVD process using a cyclopentadienyl complex within a temperature range from 180° C. or higher to 250° C. or lower.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile