The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2006
Filed:
May. 06, 2004
Ying-ming Wu, Taoyuan, TW;
Yi-tsai Hsu, Taoyuan, TW;
Chin-tzu Kao, Changhua, TW;
Yung-hsin Wu, Taoyuan, TW;
Jui-chung Chang, Taichung, TW;
Ying-Ming Wu, Taoyuan, TW;
Yi-Tsai Hsu, Taoyuan, TW;
Chin-Tzu Kao, Changhua, TW;
Yung-Hsin Wu, Taoyuan, TW;
Jui-chung Chang, Taichung, TW;
Chunghwa Picture Tubes, Ltd., Taipei, TW;
Abstract
A process of producing a thin film transistor includes forming a gate line on a substrate by first exposure and development processes. A source electrode, a drain electrode and a semiconductor channel are formed by second exposure and development processes. An island-shaped transistor is formed by third exposure and development processes. A protection layer with a contact hole therein is formed by fourth exposure and development processes. A pixel electrode is formed by fifth exposure and development processes to connect to the contact hole.