The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2006
Filed:
Feb. 10, 2003
Applicants:
Hajime Nagano, Yokohama, JP;
Takashi Yamada, Ebina, JP;
Tsutomu Sato, Yokohama, JP;
Ichiro Mizushima, Yokohama, JP;
Osamu Fujii, Yokohama, JP;
Inventors:
Hajime Nagano, Yokohama, JP;
Takashi Yamada, Ebina, JP;
Tsutomu Sato, Yokohama, JP;
Ichiro Mizushima, Yokohama, JP;
Osamu Fujii, Yokohama, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device includes a first semiconductor region having a buried oxide layer formed therein, a second semiconductor region in which the buried oxide layer does not exist, a trench formed to such a depth as to reach at least the buried oxide layer in a boundary portion between the first and second semiconductor regions, and an isolation insulating layer buried in the trench.