The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2006
Filed:
Oct. 21, 2003
Martin Weber, Kastl, DE;
Peter Vilzmann, Burghausen, DE;
Erich Gmeilbauer, Pantaleon, AT;
Robert Vorbuchner, Burghausen, DE;
Martin Weber, Kastl, DE;
Peter Vilzmann, Burghausen, DE;
Erich Gmeilbauer, Pantaleon, AT;
Robert Vorbuchner, Burghausen, DE;
Siltronic AG, Munich, DE;
Abstract
A process for producing a doped silicon single crystal, comprising after-doping the melt during the pulling process with a quantity of volatile dopant ΔN(t), calculated according to the equationΔ()=()=·(1−)or according to the approximation equationΔ()=·λwhere λis an evaporation coefficient which describes process-specific evaporation behavior of the foreign substance and which is obtained after a resistance profile R(t) of a further single crystal has been measured and calculated according to the equation()=,where Ris a starting resistivity and the further single crystal is pulled under the same process conditions without being after-doped with the foreign substance.
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