The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2006
Filed:
Mar. 14, 2003
Applicant:
Shiao-shien Chen, Chung-Li, TW;
Inventor:
Shiao-Shien Chen, Chung-Li, TW;
Assignee:
United Microelectronics Corp., Hsin-chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02H 9/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A BiCMOS electrostatic discharge (ESD) protecting circuit is triggered by a bipolar junction transistor (BJT) for achieving ESD protection. Due to the layout area of the BJT ESD protecting circuit being smaller than the layout area of an RC circuit, layout area can be reduced. Moreover, the BJT reduces leakage current problems and has a lower triggering voltage. Therefore, the BJT in the ESD protecting circuit can effectively reduce problems of a higher triggering ESD voltage and leakage current.