The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2006
Filed:
Nov. 04, 2003
Dunn-nian Yaung, Taipei, TW;
Shou-gwo Wuu, Hsin-Chu, TW;
Ho-ching Chien, Hsinchu, TW;
Yi-shing Chang, Hsin-Chu, TW;
Dunn-Nian Yaung, Taipei, TW;
Shou-Gwo Wuu, Hsin-Chu, TW;
Ho-Ching Chien, Hsinchu, TW;
Yi-Shing Chang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
Each of an elevated diode sensor optoelectronic product and a method for fabricating the elevated diode sensor optoelectronic product employs a sidewall passivation dielectric layer passivating a sidewall of a patterned conductor layer which serves as a bottom electrode for an elevated diode within the elevated diode sensor optoelectronic product. The sidewall passivation dielectric layer eliminates contact between the patterned conductor layer and an intrinsic diode material layer within the elevated diode, thus providing enhanced performance of the elevated diode sensor optoelectronic product.