The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2006
Filed:
May. 28, 2004
Terry Dyer, Strathclyde, GB;
Jim Mcginty, East Kilbride, GB;
Andrew Strachan, Santa Clara, CA (US);
Constantin Bulucea, Milpitas, CA (US);
Terry Dyer, Strathclyde, GB;
Jim McGinty, East Kilbride, GB;
Andrew Strachan, Santa Clara, CA (US);
Constantin Bulucea, Milpitas, CA (US);
National Semiconductor Corporation, Santa Clara, CA (US);
Abstract
The formation of vertical trench DMOS devices can be added to existing integrated BCD process flows in order to improve the efficiency of the BCD devices. The formation of this trench DMOS varies from existing approaches used with discrete trench DMOS devices, in that only two extra mask steps are added to the existing BCD process, instead of the 10 or so mask steps used in existing discrete trench DMOS processes. Further, the location of these additional heat cycles in the BCD process steps can be placed so as to have minimal impact on the other components created in the process. Utilizing an integrated trench device in a BCD process can offer at least a factor-of-two Rarea advantage over a planar counterpart.