The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2006
Filed:
May. 15, 2003
Rainer Schramm, Everett, MA (US);
Rainer Schramm, Everett, MA (US);
GSI Group Corporation, Billerica, MA (US);
Abstract
An improved method of laser marking semiconductor wafers is provided wherein undesirable subsurface damage to a silicon semiconductor wafer is avoided while providing a relative improvement in marking speed for a predetermined spot diameter. A laser pulse of a laser beam has a predetermined wavelength, pulse width, repetition rate, and energy. The method further includes irradiating a semiconductor wafer with the pulsed laser beam over a spot diameter to produce a machine readable mark on the semiconductor wafer. The mark has a mark depth. The pulse width is less than about 50 ns, and the step of irradiating irradiates over the spot diameter to produce a mark having a mark depth substantially less than about 10 microns.