The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2006
Filed:
Apr. 01, 2003
Kyung-in Choi, Gyeonggi-do, KR;
Gil-heyun Choi, Gyeonggi-do, KR;
Byung-hee Kim, Seoul, KR;
Sang-bum Kang, Seoul, KR;
Kyung-In Choi, Gyeonggi-do, KR;
Gil-Heyun Choi, Gyeonggi-do, KR;
Byung-Hee Kim, Seoul, KR;
Sang-Bum Kang, Seoul, KR;
Abstract
A metal layer is formed on an integrated circuit device including forming an insulating layer on an integrated circuit substrate. A contact hole is formed by selectively etching the insulating layer to thereby partially expose the substrate. A metal layer including tantalum nitride is formed on the insulating layer including the contact hole using a tantalum precursor including a tantalum element and at least one bonding element that is chemically bonded to the tantalum element. A part of the at least one bonding element include at least one ligand bonding element that is ligand-bonded to the tantalum element. Forming the metal layer may include removing at least some of the ligand bonded elements with a removing gas that is substantially free of hydrogen radicals. The metal layer may be formed using a chemical vapor deposition (CVD) or an atomic layer deposition (ALD) process. A copper or other metal layer may be deposited on the metal layer including tantalum nitride.