The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2006
Filed:
May. 26, 2004
Hiroaki Nakaoka, Kyoto, JP;
Kentaro Nakanishi, Nara, JP;
Hiroyuki Umimoto, Hyogo, JP;
Atsuhiro Kajiya, Hyogo, JP;
Hiroaki Nakaoka, Kyoto, JP;
Kentaro Nakanishi, Nara, JP;
Hiroyuki Umimoto, Hyogo, JP;
Atsuhiro Kajiya, Hyogo, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
As first thermal treatment for activating an impurity injected into a gate electrode, thermal treatment at a low temperature for a long time in which boron diffusion into each crystal grain in polysilicon hardly occurs and boron diffusion in each crystal boundary occurs is performed. Next, as second thermal treatment, thermal treatment at a high temperature for a short time, such as spike annealing and flash annealing, in which impurity diffusion into each crystal grain in a polysilicon layer occurs is performed.