The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 20, 2006

Filed:

Sep. 07, 2001
Applicants:

Ayumu Onoyama, Tokyo, JP;

Koichi Sakurai, Tokyo, JP;

Kazuhiro Oka, Tokyo, JP;

Hiroyuki Ishii, Tokyo, JP;

Katsuhiro Fujiyoshi, Tokyo, JP;

Inventors:

Ayumu Onoyama, Tokyo, JP;

Koichi Sakurai, Tokyo, JP;

Kazuhiro Oka, Tokyo, JP;

Hiroyuki Ishii, Tokyo, JP;

Katsuhiro Fujiyoshi, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06K 9/00 (2006.01); H04N 7/18 (2006.01);
U.S. Cl.
CPC ...
Abstract

Transforming optical images of a portion including a normal conductor pattern having a surface roughness, a portion subjected to an inspection, and a reference portion to images of electric charges and picking up these as electric signals by an image pick-up device, rendering the optical image including the normal conductor pattern having the surface roughness to a pixel signal by the image pick-up device, controlling a light volume of the optical image so that the pixel signal is saturated or immediately before the saturation, picking up a pixel signal of the portion to be inspected under this light volume, obtaining a differential signal from a pixel signal picked up from the reference portion, and judging an existence of defect from the differential signal, so as to detect defects such as a hiatus of conductor, a short circuit, and a deposition of an extraneous matter on a wafer, on which the normal conductor pattern having the roughened surface, with a high accuracy in processes of forming films and etching in manufacturing a semiconductor device.


Find Patent Forward Citations

Loading…