The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2006
Filed:
Feb. 04, 2002
Martin Franosch, München, DE;
Thomas Meister, Taufkirchen, DE;
Herbert Schaefer, Höhenkirchen-Siegertsbrunn, DE;
Reinhard Stengl, Stadtbergen, DE;
Martin Franosch, München, DE;
Thomas Meister, Taufkirchen, DE;
Herbert Schaefer, Höhenkirchen-Siegertsbrunn, DE;
Reinhard Stengl, Stadtbergen, DE;
Infineon Technologies AG, Munich, DE;
Abstract
A method is provided to fabricate a bipolar transistor with a low base connection resistance, low defect density and improved scalability. Scalability is to be understood in this case as both the lateral scaling of the emitter window and the vertical scaling of the base width (low temperature budget). The temperature budget can be kept low in the base region since no implantations are required in order to reduce the base connection resistance. Furthermore, the difficulties associated with the point defects are largely avoided.