The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2006
Filed:
Dec. 22, 2003
Indrajlt Manna, Singapore, SG;
Keng Foo Lo, Singapore, SG;
Pee Ya Tan, Singapore, SG;
Raymond Filippi, Singapore, SG;
Indrajlt Manna, Singapore, SG;
Keng Foo Lo, Singapore, SG;
Pee Ya Tan, Singapore, SG;
Raymond Filippi, Singapore, SG;
Chartered SemiConductor Manufacturing, LTD, Singapore, SG;
Abstract
An embodiment is a Electro Static Discharge (ESD) protection device comprising: a n-doped region and a p-doped region in a p-well in a semiconductor structure. The n-doped region and the p-doped region are spaced. A n-well and a deep n-well surrounding the p-well on the sides and bottom. A first I/O pad connected to the n-doped region. A trigger circuit connected the first I/O pad and the p-doped region. A second I/O pad connected to the n-well. A parasitic bipolar transistor is comprised of the n-doped region that functions as a collector terminal, the P-well that functions as a base terminal, and the deep N-well that functions as the emitter terminal. Whereby under an ESD condition, the p-well is charged positive using the trigger circuit and the parasitic bipolar transistor can be turned on.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile