The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2006
Filed:
Apr. 16, 2004
Emil P. Stefanov, Altbach, DE;
Hari S. Venugopalan, Somerset, NJ (US);
Bryan S. Shelton, Bound Brook, NJ (US);
Ivan Eliashevich, Maplewood, NJ (US);
Emil P. Stefanov, Altbach, DE;
Hari S. Venugopalan, Somerset, NJ (US);
Bryan S. Shelton, Bound Brook, NJ (US);
Ivan Eliashevich, Maplewood, NJ (US);
GELcore, LLC, Valley View, OH (US);
Abstract
A flip chip light emitting diode () includes a light-transmissive substrate () with a base semiconducting layer () disposed thereupon. A conductive mesh () is disposed on the base semiconducting layer () and is in electrically conductive contact therewith. Light-emitting micromesas () are disposed in openings () of the conductive mesh (). Each light emitting micromesa () has a topmost layer () of a second conductivity type that is opposite the first conductivity type. A first conductivity type electrode () is disposed on the base semiconducting layer () and is in electrical communication with the electrically conductive mesh (). An insulating layer () is disposed over the electrically conductive mesh (). A second conductivity type electrode layer () is disposed over the insulating layer () and the light-emitting micromesas (). the insulating layer () insulates the second conductivity type electrode layer () from the electrically conductive mesh ().