The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2006
Filed:
Nov. 15, 2001
Michael Turner, Austin, TX (US);
Waikit Fung, Mountain View, CA (US);
Oliver Graudejus, Sunnyvale, CA (US);
Doug Winandy, Austin, TX (US);
Michael Turner, Austin, TX (US);
Waikit Fung, Mountain View, CA (US);
Oliver Graudejus, Sunnyvale, CA (US);
Doug Winandy, Austin, TX (US);
Novellus Systems, Inc., San Jose, CA (US);
Abstract
A method for depositing a doped silicon dioxide layer is provided that allows the dopant concentration in the silicon dioxide layer to be controlled throughout the layer. By controlling the dopant concentration throughout the layer the etch profile of contact holes etched into the layer can be controlled and footing can be prevented or eliminated. During the deposition of the silicon dioxide, the amount of dopant is increased as the temperature of the wafer is increased and held constant while the temperature of the wafer is constant.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile