The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2006
Filed:
Dec. 09, 2004
Richard P. Rouse, Santa Clara, CA (US);
Richard P. Rouse, Santa Clara, CA (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A technique for forming a MOS capacitor () that can be utilized as a decoupling capacitor is disclosed. The MOS capacitor () is formed separately from the particular circuit device () that it is to service. As such, the capacitor () and its fabrication process can be optimized in terms of efficiency, etc. The capacitor () is fabricated with conductive contacts () that allow it to be fused to the device () via conductive pads () of the device (). As such, the capacitor () and device () can be packaged together and valuable semiconductor real estate can be conserved as the capacitor () is not formed out of the same substrate as the device (). The capacitor () further includes deep contacts () whereon bond pads () can be formed that allow electrical connection of the capacitor () and device () to the outside world.