The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2006
Filed:
Oct. 03, 2003
Applicants:
Vladimir Tsukanov, Sunnyvale, CA (US);
Nathan Zommer, Los Altos, CA (US);
Inventors:
Vladimir Tsukanov, Sunnyvale, CA (US);
Nathan Zommer, Los Altos, CA (US);
Assignee:
IXYS Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A power semiconductor device includes a substrate having an upper surface and a lower surface. The substrate has a trench. First and second doped regions are provided proximate the upper surface of the substrate. A first source region is provided within the first doped region. A second source region is provided within the second doped region. A gate is provided between the first and second source regions. The gate includes a first portion extending downward into the trench. A depth of the trench is no more than a depth of the first doped region.