The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2006
Filed:
Mar. 27, 2002
Mark Philip D'evelyn, Niskayuna, NY (US);
Steven William Webb, Worthington, OH (US);
Suresh Shankarappa Vagarali, Columbus, OH (US);
Yavuz Kadioglu, Clifton Park, NY (US);
Dong-sil Park, Niskayuna, NY (US);
Zheng Chen, Dublin, OH (US);
Mark Philip D'Evelyn, Niskayuna, NY (US);
Steven William Webb, Worthington, OH (US);
Suresh Shankarappa Vagarali, Columbus, OH (US);
Yavuz Kadioglu, Clifton Park, NY (US);
Dong-Sil Park, Niskayuna, NY (US);
Zheng Chen, Dublin, OH (US);
General Electric Company, Niskayuna, NY (US);
Abstract
A method of forming at least one single crystal of a Group III metal nitride. The method includes the steps of: providing a flux material and a source material comprising at least one Group III metal selected from the group consisting of aluminum, indium, and gallium, to a reaction vessel; sealing the reaction vessel; heating the reaction vessel to a predetermined temperature and applying a predetermined pressure to the vessel. The pressure is sufficient to suppress decomposition of the Group III metal nitride at the temperature. Group III metal nitrides, as well as electronic devices having a Group III metal nitride substrate formed by the method are also disclosed.