The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2006
Filed:
Jul. 25, 2001
Hotaka Ishizuka, Nirasaki, JP;
Tsukasa Matsuda, Nirasaki, JP;
Hotaka Ishizuka, Nirasaki, JP;
Tsukasa Matsuda, Nirasaki, JP;
Tokyo Electron Limited, Tokyo-to, JP;
Abstract
In a deposition method according to the present invention, a substrate () is first arranged in a processing vessel to carry out a heat-up step. Then, Si-containing gas, such as SiHgas, is supplied into the processing vessel to carry out an initiation step serving as a pretreating step on the substrate (ST). Then, a deposition gas is supplied into the processing vessel to carry out a deposition step (ST). By carrying out the initiation step (ST) by setting the partial pressure of the Si-containing gas to be not less than 50 Pa (not less than 100 Pa when the heat-up step is not carried out), it is possible to stably produce a film having a good surface condition.