The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2006
Filed:
Feb. 13, 2004
Minh Van Ngo, Fremont, CA (US);
Christy Woo, Cupertino, CA (US);
James Pan, Fishkill, NY (US);
Paul R. Besser, Sunnyvale, CA (US);
Jinsong Yin, Sunnyvale, CA (US);
Minh Van Ngo, Fremont, CA (US);
Christy Woo, Cupertino, CA (US);
James Pan, Fishkill, NY (US);
Paul R. Besser, Sunnyvale, CA (US);
Jinsong Yin, Sunnyvale, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
Microminiaturized semiconductor devices are fabricated with a replacement metal gate and a high-k tantalum oxide or tantalum oxynitride gate dielectric with significantly reduced carbon. Embodiments include forming an opening in a dielectric layer by removing a removable gate, depositing a thin tantalum film, as by PVD at a thickness of 25 Å to 60 Å lining the opening, and then conducting thermal oxidation, as at a temperature of 100° C. to 500° C., in flowing oxygen or ozone to form a high-k tantalum oxide gate dielectric layer, or in oxygen and NO or ozone and NO ammonia to form a high-k tantalum oxynitride gate dielectric. Alternatively, oxidation can be conducted in an oxygen or ozone plasma to form the high-k tantalum oxide layer, or in a plasma containing NO and oxygen or ozone to form the high-k tantalum oxynitride gate dielectric layer.