The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2006
Filed:
Jan. 27, 2004
Yu-kun Chen, Hsin-Chu, TW;
Neng-hui Yang, Hsin-Chu, TW;
Chin-cheng Chien, Hsin-Chu, TW;
Hsiang-ying Wang, Chia-I, TW;
Yu-Kun Chen, Hsin-Chu, TW;
Neng-Hui Yang, Hsin-Chu, TW;
Chin-Cheng Chien, Hsin-Chu, TW;
Hsiang-Ying Wang, Chia-I, TW;
Abstract
A method for forming a junction region of a semiconductor device is disclosed. The steps of the method include providing a semiconductor substrate. A gate structure is formed on the semiconductor substrate. A dopant is implanted into the semiconductor substrate to form the junction region. An insulator layer is formed on the gate structure and the semiconductor substrate. A carbon-containing plasma treatment is performed to the insulator layer. A spacer is formed on a side-wall of the gate structure and the dopant is implanted into the semiconductor substrate to form a source/drain region next to the junction region. A heat treatment is performed to the semiconductor substrate.