The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7058531 B1

PDF
Full Text
Expired
Date of Patent:
Jun. 06, 2006

Filed:

Mar. 31, 2004
Applicants:

Jennifer E. Appleyard, Burlington, VT (US);

Troy Carlson, Essex Junction, VT (US);

Joseph M. Forbes, Westford, VT (US);

Dean G. Percy, Stowe, VT (US);

Norman J. Rohrer, Underhill, VT (US);

William J. Tanona, Colchester, VT (US);

Inventors:

Jennifer E. Appleyard, Burlington, VT (US);

Troy Carlson, Essex Junction, VT (US);

Joseph M. Forbes, Westford, VT (US);

Dean G. Percy, Stowe, VT (US);

Norman J. Rohrer, Underhill, VT (US);

William J. Tanona, Colchester, VT (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01K 15/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method is disclosed of temperature compensation for measurement of a temperature sensitive parameter of semiconductor IC chips, particularly temperature compensation for a maximum frequency measurement (Fmax) and speed sort/categorization of semiconductor IC chips. The method includes determining a change of a temperature sensitive parameter of the chip with temperature; measuring the temperature sensitive parameter of the chip during testing of the chip; measuring the chip temperature directly during or following the measurement of the temperature sensitive parameter; and determining an adjusted temperature sensitive parameter of the chip based upon the measured temperature sensitive parameter of the chip during testing, the measured chip temperature, and the determined change of the temperature sensitive parameter of the chip with temperature.


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