The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2006
Filed:
Jun. 29, 2004
Sreeram Krishnamachari, Folsom, CA (US);
Karthikeyan Ramamurthi, Folsom, CA (US);
Sreeram Krishnamachari, Folsom, CA (US);
Karthikeyan Ramamurthi, Folsom, CA (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A flash memory includes multi-level cells (MLC) that are programmed with a combination of coarse gate voltage steps and fine gate voltage steps. The multi-level cells include floating gate transistors that are programmed by modifying the threshold voltages of the floating gate transistors. Coarse gate voltage steps are used until the threshold voltage any of the transistors being programmed reaches a reference value, and fine steps are used thereafter.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile