The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2006
Filed:
Sep. 21, 2004
Applicants:
Yanan Mou, Hsinchu, TW;
Shu-hua Kuo, Hsinchu, TW;
Jiunn-fu Liu, Hsinchu, TW;
Inventors:
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/32 (2006.01);
U.S. Cl.
CPC ...
Abstract
A capacitor structure including a conductive layer and a dielectric layer is provided. The conductive layer includes a first pattern and a second pattern arranged alternatively with respect to each other. In addition, the dielectric layer is disposed between the first spiral pattern and the second spiral pattern. Since in the capacitor structure described in the present invention, the first pattern and the second pattern being used as electrodes are disposed in a spiral shape, the capacitance per unit area of the capacitor structure is increased.