The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2006
Filed:
Jul. 10, 2003
Hitomi Watanabe, Chiba, JP;
Hitomi Watanabe, Chiba, JP;
Seiko Instruments Inc., Chiba, JP;
Abstract
In a method for manufacturing a semiconductor device, a first silicon oxide film is formed on a semiconductor substrate. The first silicon oxide film is nitrided so that silicon oxynitride forms at an interface between the semiconductor substrate and the first silicon oxide film. The first silicon oxide film is removed from a portion of the semiconductor substrate using a chemical containing at least an ammonia-hydrogen peroxide solution so that the silicon oxynitride formed at the interface between the portion of the semiconductor substrate and the first silicon oxide film is completely removed. Thereafter, a second silicon oxide film is formed in the portion of the semiconductor substrate from which the first silicon oxide film and the silicon oxynitride have been removed.