The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2006
Filed:
Jan. 03, 2005
Frank R. Bryant, Denton, TX (US);
Frank R. Bryant, Denton, TX (US);
STMicroelectronics, Inc., Carrollton, TX (US);
Abstract
The thin film transistor formed of polycrystalline silicon is positioned adjacent a heat reaction chamber. The gate electrode for the transistor is formed within a silicon substrate and a gate dielectric is positioned over the gate electrode. A pass transistor is coupled to the gate electrode, the pass transistor having a source/drain region in the same semiconductor substrate and positioned adjacent to the gate electrode of the thin film heating transistor. When the pass transistor is enabled, a voltage is applied to the gate electrode which causes the current to flow from the drain to the source of the thin film transistor. The current flow passes through a highly resistive region which generates heat that is transmitted to the heat reaction chamber.