The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2006
Filed:
Aug. 17, 2004
Chun-li Liu, Mesa, AZ (US);
Mariam G. Sadaka, Austin, TX (US);
Alexander L. Barr, Crolles, FR;
Bich-yen Nguyen, Austin, TX (US);
Voon-yew Thean, Austin, TX (US);
Shawn G. Thomas, Gilbert, AZ (US);
Ted R. White, Austin, TX (US);
Qianghua Xie, Chandler, AZ (US);
Chun-Li Liu, Mesa, AZ (US);
Mariam G. Sadaka, Austin, TX (US);
Alexander L. Barr, Crolles, FR;
Bich-Yen Nguyen, Austin, TX (US);
Voon-Yew Thean, Austin, TX (US);
Shawn G. Thomas, Gilbert, AZ (US);
Ted R. White, Austin, TX (US);
Qianghua Xie, Chandler, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A process for forming strained semiconductor layers. The process include flowing a chlorine bearing gas (e.g. hydrogen chloride, chlorine, carbon tetrachloride, and trichloroethane) over the wafer while heating the wafer. In one example, the chorine bearing gas is flowed during a condensation process on a semiconductor layer that is used as a template layer for forming a strain semiconductor layer (e.g. strain silicon). In other examples, the chlorine bearing gas is flowed during a post bake of the wafer after the condensation operation.