The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2006
Filed:
Mar. 14, 2003
Applicants:
Vladislav Vashchenko, Palo Alto, CA (US);
Ann Concannon, San Jose, CA (US);
Peter J. Hoppet, San Jose, CA (US);
Marcel Ter Beek, Pleasanton, CA (US);
Inventors:
Vladislav Vashchenko, Palo Alto, CA (US);
Ann Concannon, San Jose, CA (US);
Peter J. Hoppet, San Jose, CA (US);
Marcel ter Beek, Pleasanton, CA (US);
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
In an avalanche structure, different breakdown voltages are achieved by making use of a polygate and forming a highly doped p-n junction beneath the polygate, and adjusting the gate length and optionally the bias voltage of the gate.