The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2006
Filed:
Feb. 04, 2004
Kang Sub Yim, Santa Clara, CA (US);
Yi Zheng, San Jose, CA (US);
Srinivas D. Nemani, Sunnyvale, CA (US);
Li-qun Xia, Santa Clara, CA (US);
Eric P. Hollar, Cupertino, CA (US);
Kang Sub Yim, Santa Clara, CA (US);
Yi Zheng, San Jose, CA (US);
Srinivas D. Nemani, Sunnyvale, CA (US);
Li-Qun Xia, Santa Clara, CA (US);
Eric P. Hollar, Cupertino, CA (US);
Applies Materials Inc., Santa Clara, CA (US);
Abstract
A method for depositing a low dielectric constant film is provided by reacting a gas mixture including one or more linear, oxygen-free organosilicon compounds, one or more oxygen-free hydrocarbon compounds comprising one ring and one or two carbon-carbon double bonds in the ring, and one or more oxidizing gases. Optionally, the low dielectric constant film is post-treated after it is deposited. In one aspect, the post treatment is an electron beam treatment.