The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2006
Filed:
Jul. 03, 2002
Applicants:
Kashmir S. Sahota, Fremont, CA (US);
Krishnashree Achuthan, San Ramon, CA (US);
Inventors:
Kashmir S. Sahota, Fremont, CA (US);
Krishnashree Achuthan, San Ramon, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/302 (2006.01); H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of manufacturing a planarized semiconductor wafer in which a semiconductor wafer is provided with a chemical-mechanical polishing stop layer deposited thereon. A photoresist layer is processed and used to form a patterned chemical-mechanical polishing stop layer and shallow trenches. A shallow trench isolation material is then grown on the chemical-mechanical polishing stop layer and in the shallow trenches, and is chemical-mechanical polished to the chemical-mechanical polishing stop layer.