The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2006
Filed:
Aug. 20, 2004
Cheng T. Horng, San Jose, CA (US);
Mao-min Chen, San Jose, CA (US);
Chen-jung Chien, Sunnyvale, CA (US);
Cherng-chyi Han, San Jose, CA (US);
Ru-ying Tong, San Jose, CA (US);
Chyu-jiuh Torng, Pleasanton, CA (US);
Hui-chuan Wang, Pleasanton, CA (US);
Cheng T. Horng, San Jose, CA (US);
Mao-Min Chen, San Jose, CA (US);
Chen-Jung Chien, Sunnyvale, CA (US);
Cherng-Chyi Han, San Jose, CA (US);
Ru-Ying Tong, San Jose, CA (US);
Chyu-Jiuh Torng, Pleasanton, CA (US);
Hui-Chuan Wang, Pleasanton, CA (US);
Headway Technologies, Inc., Milpitas, CA (US);
Abstract
A method for fabricating a longitudinally hard biased, bottom spin valve GMR sensor with a lead overlay (LOL) conducting lead configuration and a narrow effective trackwidth. The advantageous properties of the sensor are obtained by providing two novel barrier layers, one of which prevents oxidation of and Au diffusion into the free layer during annealing and etching and the other of which prevents oxidation of the capping layer during annealing so as to allow good electrical contact between the lead and the sensor stack.