The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2006
Filed:
Mar. 17, 2003
Applicants:
Wolfram Karcher, Langebrueck, DE;
Dietmar Temmler, Dresden, DE;
Martin Schrems, Eggersdorf, AT;
Inventors:
Assignee:
Infineon Technologies AG, Munich, DE;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8242 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor memory cell is formed in a substrate and includes a trench capacitor and a selection transistor. The trench capacitor includes a capacitor dielectric and a conductive trench filling. Disposed on the conductive trench filling is a diffusion barrier on which an epitaxial layer is formed. The selection transistor is disposed as a planar transistor above the trench capacitor. A drain doping region of the selection transistor is disposed in the epitaxial layer.