The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2006
Filed:
Nov. 10, 2003
Cheng-wen Fan, Hsin-Chu Hsien, TW;
Hua-chou Tseng, Hsin-Chu, TW;
Chia-hong Chin, Taipei, TW;
Chun-yi Lin, Taipei, TW;
Cheng-choug Hung, Changhua, TW;
Cheng-Wen Fan, Hsin-Chu Hsien, TW;
Hua-Chou Tseng, Hsin-Chu, TW;
Chia-Hong Chin, Taipei, TW;
Chun-Yi Lin, Taipei, TW;
Cheng-Choug Hung, Changhua, TW;
United Microelectronics Corp., Hsin-Chu, TW;
Abstract
A method for forming a SiGe HBT, which combines a SEG and Non-SEG growth, is disclosed. The SiGe base layer is deposited by a Non-SEG method. Then, the first-emitter layer is developed directly upon the SiGe base layer that has a good interface quality between the base-emitter. Next, a second poly silicon layer, which has a dopant concentration range within 1E19 to 1E21 (atom/cc), is deposited by SEG method. It not only reduces the resistance of the SiGe base layer, but also avoids the annealing that may influence the performance of the device.