The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2006
Filed:
Nov. 26, 2002
Nga-ching Wong, San Jose, CA (US);
Timothy Thurgate, Sunnyvale, CA (US);
Sameer S. Haddad, San Jose, CA (US);
Nga-Ching Wong, San Jose, CA (US);
Timothy Thurgate, Sunnyvale, CA (US);
Sameer S. Haddad, San Jose, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A lateral doped channel. A first doping material is implanted substantially vertically into a region adjacent to a gate structure. A diffusion process diffuses the first doping material into a channel region beneath the gate structure. A second doping material is implanted substantially vertically into the region adjacent to a gate structure. The second implantation forms source/drain regions and may terminate the channel region. The channel region thus comprises a laterally non-uniform doping profile which beneficially mitigates the short channel effect and is highly advantageous as compensation for manufacturing process variations in channel length.