The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2006
Filed:
Jun. 28, 2002
Hitoshi Sakamoto, Kanagawa-ken, JP;
Naoki Yahata, Hyogo-ken, JP;
Hitoshi Sakamoto, Kanagawa-ken, JP;
Naoki Yahata, Hyogo-ken, JP;
Mitsubishi Heavy Industries, Ltd., Tokyo, JP;
Abstract
A copper film vapor phase deposition method includes the steps of exposing high-purity copper to a plasma of a gas containing chlorine gas to etch the high-purity copper, thereby generating active CuCl, wherein x is 1 to 3, y is 1 to 3, gas, and forming a copper film by transporting the CuClgas onto the surface of a substrate to be processed. By using inexpensive high-purity copper and inexpensive chlorine, hydrogen chloride, or chlorine and hydrogen as source gases, a copper film containing no residual impurity such as carbon and having high film quality can be formed with high reproducibility.