The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2006
Filed:
Sep. 16, 2004
Masayuki Watanabe, Hadano, JP;
Junichi Osanai, Nishiokitama-gun, JP;
Akihiko Kobayashi, Sagamihara, JP;
Kazuhiko Kashima, Tokyo, JP;
Hiroyuki Fujimori, Hadano, JP;
Masayuki Watanabe, Hadano, JP;
Junichi Osanai, Nishiokitama-gun, JP;
Akihiko Kobayashi, Sagamihara, JP;
Kazuhiko Kashima, Tokyo, JP;
Hiroyuki Fujimori, Hadano, JP;
Toshiba Ceramics Co., Ltd., Tokyo, JP;
Abstract
At the time of fabricating a silicon single crystal wafer from a nitrogen-doped silicon single crystal grown according to the Czochralski method, a silicon single crystal wafer covered with a region in which an oxygen precipitation bulk micro defect and an oxidation induced stacking fault mixedly exist is subjected to heat treatment at a temperature of 1100 to 1300° C. in a reducing gas or inert gas atmosphere. In such a manner, a method of fabricating a high-quality silicon single crystal wafer and a silicon single crystal wafer in which no grown-in crystal defects exist in the whole surface and oxygen precipitation bulk micro defects (BMD) are formed at a sufficiently high density to display the IG effect on the inner side can be provided. The single crystal wafer can be suitably used to form an operation region of a semiconductor device.