The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2006
Filed:
Mar. 01, 2004
Tae-kyoung Kim, Yongin, KR;
Sun-yong Choi, Sungnam, KR;
Chung-sam Jun, Suwon, KR;
Jeong-hyun Choi, Yongin, KR;
Tae-Kyoung Kim, Yongin, KR;
Sun-Yong Choi, Sungnam, KR;
Chung-Sam Jun, Suwon, KR;
Jeong-Hyun Choi, Yongin, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A method of measuring a concentration of dopants of an objective thin film includes measuring a concentration of dopants of a first wafer, forming the objective thin film on the first wafer to form a second wafer, measuring a concentration of dopants of the second wafer, and obtaining the concentration of dopants of the objective thin film by subtracting the concentration of dopants of the first wafer from the concentration of dopants of the second wafer. Therefore, the concentration of dopants of the objective thin film may be measured without the use of a criterion wafer, thereby reducing measuring time. Also, the concentration of dopants of the objective thin film may be easily controlled, and therefore promptly corrected if necessary.