The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2006
Filed:
Dec. 24, 2003
Yoshiyuki Hisada, Okazaki, JP;
Eiichi Okuno, Mizuho, JP;
Yoshihito Mitsuoka, Nishikamo-gun, JP;
Shinji Amano, Okazaki, JP;
Takeshi Endo, Obu, JP;
Shinichi Mukainakano, Nagoya, JP;
Ayahiko Ichimiya, Nagoya, JP;
Yoshiyuki Hisada, Okazaki, JP;
Eiichi Okuno, Mizuho, JP;
Yoshihito Mitsuoka, Nishikamo-gun, JP;
Shinji Amano, Okazaki, JP;
Takeshi Endo, Obu, JP;
Shinichi Mukainakano, Nagoya, JP;
Ayahiko Ichimiya, Nagoya, JP;
Denso Corporation, Kariya, JP;
Abstract
The principal surface of a p-type SiC substrate () is formed of a face intersecting (0001) Si-face at 10 to 16°. An nsource region () and an ndrain region () are formed in a surface layer portion at the principal surface of the p-type SiC substrate () so as to be separated from each other. A gate electrode () is formed on a gate oxide film () on the principal surface of the p-type SiC substrate ().