The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2006
Filed:
Apr. 23, 2003
Yasunari Umemoto, Sayama, JP;
Hideyuki Ono, Kokubunji, JP;
Tomonori Tanoue, Machida, JP;
Yasuo Ohsone, Chiyoda, JP;
Isao Ohbu, Sagamihara, JP;
Chushiro Kusano, Niiza, JP;
Atsushi Kurokawa, Takasaki, JP;
Masao Yamane, Takasaki, JP;
Yasunari Umemoto, Sayama, JP;
Hideyuki Ono, Kokubunji, JP;
Tomonori Tanoue, Machida, JP;
Yasuo Ohsone, Chiyoda, JP;
Isao Ohbu, Sagamihara, JP;
Chushiro Kusano, Niiza, JP;
Atsushi Kurokawa, Takasaki, JP;
Masao Yamane, Takasaki, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
The invention is directed to improve resistance to destruction of a semiconductor device. A protection circuit having a plurality of bipolar transistors which are Darlington connected between outputs (collector and emitter) of an amplification circuit of a high output is electrically connected in parallel with the amplification circuit. The amplification circuit has a plurality of unit HBTs (Heterojunction Bipolar Transistors) which are connected in parallel with each other. The protection circuit has a two-stage configuration including a first group of a protection circuit having a plurality of bipolar transistors Qto Qand a second group of a protection circuit having a plurality of bipolar transistors.