The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2006
Filed:
Mar. 26, 2003
Unryu Ogawa, Tokyo, JP;
Naoya Yamakado, Tokyo, JP;
Tadashi Terasaki, Tokyo, JP;
Shinji Yashima, Tokyo, JP;
Unryu Ogawa, Tokyo, JP;
Naoya Yamakado, Tokyo, JP;
Tadashi Terasaki, Tokyo, JP;
Shinji Yashima, Tokyo, JP;
Hitachi Kokusai Electric Inc., Tokyo, JP;
Abstract
A semiconductor device producing method using a plasma processing apparatus including a processing chamber, a substrate-supporting body which supports a substrate in the processing chamber, and a cylindrical electrode and a magnetic lines of force-forming member disposed around the processing chamber, comprises forming an oxide film on the substrate, and thereafter, by changing a high frequency impedance of the substrate-supporting body, continuously forming an oxynitride film by nitriding the oxide film by activated species of nitrogen which are activated by plasma.