The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2006
Filed:
Dec. 27, 2004
Masayuki Ichige, Yokohama, JP;
Yuji Takeuchi, Yokohama, JP;
Michiharu Matsui, Fujisawa, JP;
Atsuhiro Sato, Zushi, JP;
Kikuko Sugimae, Yokohama, JP;
Riichiro Shirota, Fujisawa, JP;
Masayuki Ichige, Yokohama, JP;
Yuji Takeuchi, Yokohama, JP;
Michiharu Matsui, Fujisawa, JP;
Atsuhiro Sato, Zushi, JP;
Kikuko Sugimae, Yokohama, JP;
Riichiro Shirota, Fujisawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device includes a semiconductor substrate, source and drain regions, a channel region, a gate insulating film, a charge storage layer, and a control gate electrode. The source and drain regions include first impurities of a first conductivity type. The channel region includes second impurities of a second conductivity type. The gate insulating film includes the second impurities in a region thereof located immediately above at least a portion of the channel region. The charge storage layer is formed on the gate insulating film. The control gate electrode is provided on the charge storage layer. The control gate electrode is formed on the charge storage layer and is electrically connected to the charge storage layer by a connection portion provided on a part of the charge storage layer, which is located immediately above at least a part of the region of the gate insulating film including the second impurities.