The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 16, 2006

Filed:

Mar. 12, 2003
Applicants:

Jozef Mitros, Richardson, TX (US);

Weidong Tian, Dallas, TX (US);

Pinghai Hao, Plano, TX (US);

Victor Ivanov, Richardson, TX (US);

Inventors:

Jozef Mitros, Richardson, TX (US);

Weidong Tian, Dallas, TX (US);

Pinghai Hao, Plano, TX (US);

Victor Ivanov, Richardson, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention provides a semiconductor device (), a method of manufacture therefor and an integrated circuit including the same. In one embodiment of the invention, the semiconductor device () includes a floating gate () located over a semiconductor substrate (), wherein the floating gate () has a metal control gate () located thereover. The semiconductor device (), in the same embodiment, further includes a dielectric layer () located between the floating gateand the metal control gate (), the dielectric layer () having a gettering material located therein.


Find Patent Forward Citations

Loading…